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| IL55B/ 56B/ MOC8021 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain Features * High collector-emitter breakdown voltage, 80 V minimum * High isolation resistance, 1011 typical * Standard plastic DIP Package * No base terminal connection for improved common mode interface immunity * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6 NC 5C 4E i179013 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information Part IL55B IL56B MOC8021 IL55B-X006 IL55B-X009 IL55B-X007 Remarks CTR > 500 %, DIP-6 CTR > 1000 %, DIP-6 CTR > 1000 %, DIP-6 CTR > 500 %, SMD-6 (option 7) CTR > 500 %, SMD-6 (option 9) CTR > 500 %, SMD-6 (option 7) Description The IL5xB and MOC8021 are optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 55 C Test condition Symbol VR IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/C Document Number 83637 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL55B/ 56B/ MOC8021 Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector (load) current Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVECO IC Pdiss Value 80 5.0 125 150 2.0 Unit V V mA mW mW/C Coupler Parameter Total power dissipation Derate linearly from 25 C Isolation test voltage (between emitter and detector referred to standard climate 23 C/50 % RH, DIN 50014) Creepage Clearance Tracking resistance, group III (KC > 600 per VDE 110 6, table 3 and DIN 54380/VDE 0330, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Lead soldering time at 260 C RIO RIO Tstg Tamb Tsld 1012 1011 - 55 to + 150 - 55 to + 100 10 C C sec. VISO Test condition Symbol Ptot Value 250 3.3 5300 Unit mW mW/C VRMS 7 7 mm mm Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 50 mA VR = 3.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.25 0.1 25 Max 1.5 10 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA, IF = 0 IE = 100 A, IF = 0 VCE = 60 V Symbol BVCEO BVECO ICEO Min 80 5.0 10 1.0 Typ. Max Unit V V A www.vishay.com 2 Document Number 83637 Rev. 1.5, 26-Oct-04 IL55B/ 56B/ MOC8021 Vishay Semiconductors Coupler Parameter Coupling capacitance Collector-emitter saturation voltage IC = 2.0 mA, IF = 1.0 mA Test condition Symbol CC VCE(sat) Min Typ. 1.5 1.0 Max Unit pF V Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 10 mA, IF = 0 Part IL55B IL56B MOC8021 Symbol CTR CTR CTR Min 500 1000 1000 Typ. Max Unit % % % Switching Characteristics Parameter Turn-on time Turn-off time Test condition VCC = 10 V IF = 5.0 mA, RL = 100 Symbol tON tOFF Min Typ. 5.0 100 Max Unit s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 NCTRce - Normalized CTR VF - Forward Voltage - V 1.2 Ta = -55C 1.0 0.8 0.6 0.4 0.2 Normalized to: Vce = 5 V IF = 10 mA Vce = 5 V 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = 25C Ta = 85C Vce =1V 0.0 .1 1 10 100 1000 1 10 IF - Forward Current - mA 100 iil55b_02 IF - LED Current - mA iil55b_01 Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Document Number 83637 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL55B/ 56B/ MOC8021 Vishay Semiconductors 10 Normalized to: IF = 10 mA Vce = 5 V Vce = 5 V IF NIce - Normalized Ice 1 Vce = 1V .1 tD tR t PLH .01 VO .001 .1 iil55b_03 VTH=1.5 V 10 1 IF - LED Current - mA 100 t PHL iil55b_06 tS tF Figure 3. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current Figure 6. Switching Waveform 80 tpLH -Low/High Propagation Delay - s VCC = 5V Vth = 1.5 V 60 1.0 k V CC =13.5 V 220 i F=10 KHz, DF=50% RL VO 470 40 20 100 0 0 5 10 15 20 iil55b_07 IF =50 mA IF - LED Current - mA iil55b_04 Figure 4. Low to High Propagation Delay vs. Collector Load Resistance and LED Current Figure 7. Switching Schematic 20 tpHL -Low/High Propagation Delay - s 1k 15 VCC = 5 V Vth = 1.5 V 10 100 5 0 0 iil55b_05 5 10 15 20 IF - LED Current - mA Figure 5. High to low Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 4 Document Number 83637 Rev. 1.5, 26-Oct-04 IL55B/ 56B/ MOC8021 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 Document Number 83637 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL55B/ 56B/ MOC8021 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83637 Rev. 1.5, 26-Oct-04 |
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